公司對客戶的承諾以及我們全球約 550 名員工的奉獻精神是我們成功的基石。這種方法為我們提供了競爭優勢,這種優勢將持續到未來。我們已經明確定義了我們的管理、環境和社會責任行為原則。我們位于瑞士和泰國的生產工廠已通過 ISO 9001(質量)和 ISO 14001(環境)和 IATF 16949(汽車)認證。微晶晶振所有的產品都滿足必要的要求,如 RoHS、REACH 等。低頻音叉晶體需要在真空下工作,因此需要密封封裝。所有產品均符合 RoHS 標準且 100% 無鉛。
510BBA156M250BAGR |
Si510 |
156.25MHz |
3.3V |
±25ppm |
510BBA156M250BAGR |
Si510 |
156.25MHz |
3.3V |
±25ppm |
510BBA156M250BAGR |
Si510 |
156.25MHz |
3.3V |
±25ppm |
511FBA125M000BAG |
Si511 |
125MHz |
2.5V |
±25ppm |
511BBA100M000AAG |
Si511 |
100MHz |
3.3V |
±25ppm |
511BBA148M500BAG |
Si511 |
148.5MHz |
3.3V |
±25ppm |
511ABA156M250AAG |
Si511 |
156.25MHz |
3.3V |
±25ppm |
511BBA200M000BAG |
Si511 |
200MHz |
3.3V |
±25ppm |
530FB125M000DG |
Si530 |
125MHz |
2.5V |
±20ppm |
531BB125M000DG |
Si531 |
125MHz |
3.3V |
±20ppm |
530BB125M000DG |
Si530 |
125MHz |
3.3V |
±20ppm |
531FB200M000DG |
Si531 |
200MHz |
2.5V |
±20ppm |
530FB200M000DG |
Si530 |
200MHz |
2.5V |
±20ppm |
530BC156M250DG |
Si530 |
156.25MHz |
3.3V |
±7ppm |
531FC250M000DG |
Si531 |
250MHz |
2.5V |
±7ppm |
511BBA100M000BAG |
Si511 |
100MHz |
3.3V |
±25ppm |
510BBA125M000BAG |
Si510 |
125MHz |
3.3V |
±25ppm |
511BBA125M000BAG |
Si511 |
125MHz |
3.3V |
±25ppm |
511ABA100M000AAG |
Si511 |
100MHz |
3.3V |
±25ppm |
511BBA000110BAG |
Si511 |
148.35165MHz |
3.3V |
±25ppm |
511BBA148M500AAG |
Si511 |
148.5MHz |
3.3V |
±25ppm |
511FBA200M000BAG |
Si511 |
200MHz |
2.5V |
±25ppm |
510BBA200M000BAG |
Si510 |
200MHz |
3.3V |
±25ppm |
511FBA200M000AAG |
Si511 |
200MHz |
2.5V |
±25ppm |
511ABA25M0000BAG |
Si511 |
25MHz |
3.3V |
±25ppm |
隨著全球經濟的持續好轉,我們注意到電子產品的消費支出在逐漸增長,而這其中有許多產品在中國生產。我們也注意到中國的電子產業正在迅速多樣化發展,遠遠超出了其傳統的消費類電子產品領域,越來越多的跨國公司和中國企業正在為通信和嵌入式市場進行電子設計。這些公司不僅在中國制造產品,而且也運用中國工程師的才能為各種終端應用進行新產品設計。正是這些市場驅動力推動了中國客戶對晶體振蕩器的需求。
511FCA100M000BAG |
Si511 |
100MHz |
2.5V |
±20ppm |
511BCA100M000BAG |
Si511 |
100MHz |
3.3V |
±20ppm |
530BA125M000DG |
Si530 |
125MHz |
3.3V |
±50ppm |
531FB125M000DG |
Si531 |
125MHz |
2.5V |
±20ppm |
530BB100M000DG |
Si530 |
100MHz |
3.3V |
±20ppm |
530FC156M250DG |
Si530 |
156.25MHz |
2.5V |
±7ppm |
510ABA125M000BAG |
Si510 |
125MHz |
3.3V |
±25ppm |
511BBA74M2500BAG |
Si511 |
74.25MHz |
3.3V |
±25ppm |
510BBA156M250BAG |
Si510 |
156.25MHz |
3.3V |
±25ppm |
511ABA156M250BAG |
Si511 |
156.25MHz |
3.3V |
±25ppm |
510FBA200M000BAG |
Si510 |
200MHz |
2.5V |
±25ppm |
510ABA200M000BAG |
Si510 |
200MHz |
3.3V |
±25ppm |
530FA156M250DG |
Si530 |
156.25MHz |
2.5V |
±50ppm |
531BC000110DG |
Si531 |
148.35165MHz |
3.3V |
±7ppm |
535FB125M000DG |
Si535 |
125MHz |
2.5V |
±20ppm |
SI50122-A4-GM |
SI50122-A4 |
100MHz |
2.25 V ~ 3.63 V |
+100ppm |
511ABA156M250AAGR |
Si511 |
156.25MHz |
3.3V |
±25ppm |
511ABA156M250AAGR |
Si511 |
156.25MHz |
3.3V |
±25ppm |
511ABA156M250AAGR |
Si511 |
156.25MHz |
3.3V |
±25ppm |
530FC125M000DG |
Si530 |
125MHz |
2.5V |
±7ppm |
531BC200M000DG |
Si531 |
200MHz |
3.3V |
±7ppm |
531BC250M000DG |
Si531 |
250MHz |
3.3V |
±7ppm |
530AC622M080DG |
Si530 |
622.08MHz |
3.3V |
±7ppm |
511FBA100M000BAG |
Si511 |
100MHz |
2.5V |
±25ppm |
511BBA106M250BAG |
Si511 |
106.25MHz |
3.3V |
±25ppm |
消費電子市場持續不斷的快速增長帶動大批量石英晶體振蕩器的需求,而針對通信和嵌入式應用盡管現在數量還比較少,但我們也期望能有更多增長。振蕩器通常用于各種消費類應用,包括智能手機、液晶電視、DVD播放機、數碼相機和攝像機,以及平板電腦。在通信應用中,我們認為中國在以太網無源光網絡(EPON)應用中將有更多的晶體振蕩器需求,而我們產品中的許多是專為中國市場而設計。隨著中國新興中產階級的不斷擴大,購買力持續增長,我們認為針對中國本地設計和制造的電子產品需求將顯著增長。
510BBA156M250AAG |
Si510 |
156.25MHz |
3.3V |
±25ppm |
510ABA156M250AAG |
Si510 |
156.25MHz |
3.3V |
±25ppm |
531BC125M000DG |
Si531 |
125MHz |
3.3V |
±7ppm |
530AC125M000DG |
Si530 |
125MHz |
3.3V |
±7ppm |
531FB106M250DG |
Si531 |
106.25MHz |
2.5V |
±20ppm |
531AC156M250DG |
Si531 |
156.25MHz |
3.3V |
±7ppm |
531AC200M000DG |
Si531 |
200MHz |
3.3V |
±7ppm |
531BC148M500DG |
Si531 |
148.5MHz |
3.3V |
±7ppm |
530AC200M000DG |
Si530 |
200MHz |
3.3V |
±7ppm |
530BC200M000DG |
Si530 |
200MHz |
3.3V |
±7ppm |
531BC156M250DG |
Si531 |
156.25MHz |
3.3V |
±7ppm |
530FC200M000DG |
Si530 |
200MHz |
2.5V |
±7ppm |
536BB156M250DG |
Si536 |
156.25MHz |
3.3V |
±20ppm |
536FB156M250DG |
Si536 |
156.25MHz |
2.5V |
±20ppm |
536AB156M250DG |
Si536 |
156.25MHz |
3.3V |
±20ppm |
510FBA125M000BAG |
Si510 |
125MHz |
2.5V |
±25ppm |
511BBA000149BAG |
Si511 |
74.175824MHz |
3.3V |
±25ppm |
510FBA100M000BAG |
Si510 |
100MHz |
2.5V |
±25ppm |
511FBA106M250BAG |
Si511 |
106.25MHz |
2.5V |
±25ppm |
510BBA106M250BAG |
Si510 |
106.25MHz |
3.3V |
±25ppm |
511BBA125M000AAG |
Si511 |
125MHz |
3.3V |
±25ppm |
510BBA100M000AAG |
Si510 |
100MHz |
3.3V |
±25ppm |
510BBA125M000AAG |
Si510 |
125MHz |
3.3V |
±25ppm |
511FBA100M000AAG |
Si511 |
100MHz |
2.5V |
±25ppm |
511BBA106M250AAG |
Si511 |
106.25MHz |
3.3V |
±25ppm |
Silicon Labs為通信和嵌入式市場主要提供高性能的晶體振蕩器(XO)和壓控晶體振蕩器(VCXO晶振)系列產品。這些產品為客戶帶來多種特有優勢:首先,Silicon Labs采用批量定制和短周期交付商業模式提供XO/VCXO。任意頻率的XO/VCXO能夠進行工廠定制并在2周內交貨(針對樣片)和4周交貨(針對產品訂單)。
511FBA148M500BAG |
Si511 |
148.5MHz |
2.5V |
±25ppm |
510FBA148M500BAG |
Si510 |
148.5MHz |
2.5V |
±25ppm |
511BBA156M250BAG |
Si511 |
156.25MHz |
3.3V |
±25ppm |
511FBA156M250BAG |
Si511 |
156.25MHz |
2.5V |
±25ppm |
510BBA148M500BAG |
Si510 |
148.5MHz |
3.3V |
±25ppm |
511BBA156M250AAG |
Si511 |
156.25MHz |
3.3V |
±25ppm |
510FBA156M250AAG |
Si510 |
156.25MHz |
2.5V |
±25ppm |
511ABA155M520AAG |
Si511 |
155.52MHz |
3.3V |
±25ppm |
510FBA148M500AAG |
Si510 |
148.5MHz |
2.5V |
±25ppm |
511BBA155M520AAG |
Si511 |
155.52MHz |
3.3V |
±25ppm |
510BBA148M500AAG |
Si510 |
148.5MHz |
3.3V |
±25ppm |
510ABA148M500AAG |
Si510 |
148.5MHz |
3.3V |
±25ppm |
510DBA100M000AAG |
Si510 |
100MHz |
3.3V |
±25ppm |
531AC125M000DG |
Si531 |
125MHz |
3.3V |
±7ppm |
531FC125M000DG |
Si531 |
125MHz |
2.5V |
±7ppm |
530AC156M250DG |
Si530 |
156.25MHz |
3.3V |
±7ppm |
531FC156M250DG |
Si531 |
156.25MHz |
2.5V |
±7ppm |
531FC148M500DG |
Si531 |
148.5MHz |
2.5V |
±7ppm |
531AC155M520DG |
Si531 |
155.52MHz |
3.3V |
±7ppm |
530AC155M520DG |
Si530 |
155.52MHz |
3.3V |
±7ppm |
531BC155M520DG |
Si531 |
155.52MHz |
3.3V |
±7ppm |
531FC200M000DG |
Si531 |
200MHz |
2.5V |
±7ppm |
530BC148M500DG |
Si530 |
148.5MHz |
3.3V |
±7ppm |
536EB156M250DG |
Si536 |
156.25MHz |
2.5V |
±20ppm |
536BB125M000DG |
Si536 |
125MHz |
3.3V |
±20ppm |
傳統的振蕩器要求采用機械密集的工藝去切割石英晶體以產生特定頻率的諧振。而對于大于125MHz的頻率,傳統工藝對生產過程較敏感,導致產品成本和交貨時間增長 — 大約要14-16周。Silicon Labs改變了振蕩器制造模式,可從單一的、具有成本效益的晶振和定制的CMOS IC生成任意的輸出頻率。例如近期推出的Si5350/51單芯片8路輸出VCXO時鐘發生器,在靈活性,抖動性以及功耗方面有了很大的提升,其性能優于4-PLL時鐘,而且無需級聯PLL和多余分立元件,通過專有的MutiSynth技術可輸出8個任意頻率,非常適合用于需要多個頻率支持的器件。
531AC622M080DG |
Si531 |
622.08MHz |
3.3V |
±7ppm |
531AC312M500DG |
Si531 |
312.5MHz |
3.3V |
±7ppm |
510ABA000149BAG |
Si510 |
74.175824MHz |
3.3V |
±25ppm |
510BBA000149BAG |
Si510 |
74.175824MHz |
3.3V |
±25ppm |
511FBA000149BAG |
Si511 |
74.175824MHz |
2.5V |
±25ppm |
510ABA106M250BAG |
Si510 |
106.25MHz |
3.3V |
±25ppm |
511ABA106M250BAG |
Si511 |
106.25MHz |
3.3V |
±25ppm |
511FBA74M2500BAG |
Si511 |
74.25MHz |
2.5V |
±25ppm |
511ABA000149BAG |
Si511 |
74.175824MHz |
3.3V |
±25ppm |
510FBA000149BAG |
Si510 |
74.175824MHz |
2.5V |
±25ppm |
510ABA74M2500BAG |
Si510 |
74.25MHz |
3.3V |
±25ppm |
510FBA000149AAG |
Si510 |
74.175824MHz |
2.5V |
±25ppm |
510ABA125M000AAG |
Si510 |
125MHz |
3.3V |
±25ppm |
510ABA106M250AAG |
Si510 |
106.25MHz |
3.3V |
±25ppm |
511FBA106M250AAG |
Si511 |
106.25MHz |
2.5V |
±25ppm |
510ABA74M2500AAG |
Si510 |
74.25MHz |
3.3V |
±25ppm |
511FBA000149AAG |
Si511 |
74.175824MHz |
2.5V |
±25ppm |
510BBA000149AAG |
Si510 |
74.175824MHz |
3.3V |
±25ppm |
510ABA000149AAG |
Si510 |
74.175824MHz |
3.3V |
±25ppm |
510FBA74M2500AAG |
Si510 |
74.25MHz |
2.5V |
±25ppm |
511ABA74M2500AAG |
Si511 |
74.25MHz |
3.3V |
±25ppm |
510BBA106M250AAG |
Si510 |
106.25MHz |
3.3V |
±25ppm |
511ABA000149AAG |
Si511 |
74.175824MHz |
3.3V |
±25ppm |
510BBA74M2500AAG |
Si510 |
74.25MHz |
3.3V |
±25ppm |
511FBA74M2500AAG |
Si511 |
74.25MHz |
2.5V |
±25ppm |
Silicon Labs所有的XO/ VCXO都提供小于1ps RMS的相位抖動特性,這使他們能夠用于高速串行應用,如千兆以太網(Gigabit Ethernet)、萬兆以太網(10GbE)、光纖通道(Fibre Channel)、廣播視頻(HD SDI)、SONET/SDH、光傳輸網絡(OTN)、無源光網絡(PON)、通用公共無線電接口(CPRI)和PCI Express Gen1/Gen2/Gen3。 Silicon Labs的Si5xx XO/ VCXO還提供了板上電壓調節,大大減少了板級電源噪聲對時鐘抖動的增加。 Silicon Labs還提供單頻率和多頻率輸出振蕩器,包括I2C編程的XO(Si514、Si598、Si570)和VCXO(Si599、Si571),極大地提高了頻率靈活性,而且通過消除多個分立XO/VCXO簡化了多速率時鐘發生器應用。總之,這些益處使得Si5xx XO/VCXO成為FPGA應用的理想時鐘源。
510FBA106M250AAG |
Si510 |
106.25MHz |
2.5V |
±25ppm |
511BBA000149AAG |
Si511 |
74.175824MHz |
3.3V |
±25ppm |
510ABA155M520BAG |
Si510 |
155.52MHz |
3.3V |
±25ppm |
510FBA155M520BAG |
Si510 |
155.52MHz |
2.5V |
±25ppm |
511FBA155M520BAG |
Si511 |
155.52MHz |
2.5V |
±25ppm |
510ABA000110BAG |
Si510 |
148.35165MHz |
3.3V |
±25ppm |
511ABA000110BAG |
Si511 |
148.35165MHz |
3.3V |
±25ppm |
511ABA148M500BAG |
Si511 |
148.5MHz |
3.3V |
±25ppm |
511ABA155M520BAG |
Si511 |
155.52MHz |
3.3V |
±25ppm |
510BBA000110BAG |
Si510 |
148.35165MHz |
3.3V |
±25ppm |
510FBA000110BAG |
Si510 |
148.35165MHz |
2.5V |
±25ppm |
510BBA155M520BAG |
Si510 |
155.52MHz |
3.3V |
±25ppm |
510FBA155M520AAG |
Si510 |
155.52MHz |
2.5V |
±25ppm |
510ABA000110AAG |
Si510 |
148.35165MHz |
3.3V |
±25ppm |
510FBA000110AAG |
Si510 |
148.35165MHz |
2.5V |
±25ppm |
511FBA155M520AAG |
Si511 |
155.52MHz |
2.5V |
±25ppm |
510ABA155M520AAG |
Si510 |
155.52MHz |
3.3V |
±25ppm |
511ABA148M500AAG |
Si511 |
148.5MHz |
3.3V |
±25ppm |
511FBA148M500AAG |
Si511 |
148.5MHz |
2.5V |
±25ppm |
511FBA156M250AAG |
Si511 |
156.25MHz |
2.5V |
±25ppm |
510FBA212M500BAG |
Si510 |
212.5MHz |
2.5V |
±25ppm |
511FBA212M500BAG |
Si511 |
212.5MHz |
2.5V |
±25ppm |
510ABA212M500BAG |
Si510 |
212.5MHz |
3.3V |
±25ppm |
511ABA200M000BAG |
Si511 |
200MHz |
3.3V |
±25ppm |
510ABA212M500AAG |
Si510 |
212.5MHz |
3.3V |
±25ppm |
510BBA212M500AAG |
Si510 |
212.5MHz |
3.3V |
±25ppm |
510FBA212M500AAG |
Si510 |
212.5MHz |
2.5V |
±25ppm |
510FBA200M000AAG |
Si510 |
200MHz |
2.5V |
±25ppm |
511ABA212M500AAG |
Si511 |
212.5MHz |
3.3V |
±25ppm |
510EBA125M000AAG |
Si510 |
125MHz |
2.5V |
±25ppm |
510ACA47M2500AAG |
Si510 |
47.25MHz |
3.3V |
±20ppm |
530AC106M250DG |
Si530 |
106.25MHz |
3.3V |
±7ppm |
530EC106M250DG |
Si530 |
106.25MHz |
2.5V |
±7ppm |
531AC106M250DG |
Si531 |
106.25MHz |
3.3V |
±7ppm |
531EC106M250DG |
Si531 |
106.25MHz |
2.5V |
±7ppm |
另外,在3月中旬,Silicon Labs公司將推出針對小于250MHz時鐘應用的Si51x XO/VCXO系列產品。新的振蕩器系列產品包括單頻、雙頻和I2C編程的頻率器件,支持100kHz-250MHz任意輸出頻率。該系列產品還支持所有常用的信號格式(LVPECL、LVDS、HCSL和CMOS)和電源電壓(1.8V、2.5V和3.3V)。這些器件采用5mm x7mm和3.2mm x 5mm標準工業封裝,與傳統的XO/ VCXO相比具有更高的頻率靈活性、更低的抖動特性、更好的電源噪聲抑制和更低的功耗。
530FC106M250DG |
Si530 |
106.25MHz |
2.5V |
±7ppm |
530BC106M250DG |
Si530 |
106.25MHz |
3.3V |
±7ppm |
531BC187M500DG |
Si531 |
187.5MHz |
3.3V |
±7ppm |
530EC155M520DG |
Si530 |
155.52MHz |
2.5V |
±7ppm |
531EC155M520DG |
Si531 |
155.52MHz |
2.5V |
±7ppm |
530EC187M500DG |
Si530 |
187.5MHz |
2.5V |
±7ppm |
531AC187M500DG |
Si531 |
187.5MHz |
3.3V |
±7ppm |
531EC187M500DG |
Si531 |
187.5MHz |
2.5V |
±7ppm |
530AC000110DG |
Si530 |
148.35165MHz |
3.3V |
±7ppm |
530AC148M500DG |
Si530 |
148.5MHz |
3.3V |
±7ppm |
530EC000110DG |
Si530 |
148.35165MHz |
2.5V |
±7ppm |
530FC000110DG |
Si530 |
148.35165MHz |
2.5V |
±7ppm |
531EC000110DG |
Si531 |
148.35165MHz |
2.5V |
±7ppm |
531EC148M500DG |
Si531 |
148.5MHz |
2.5V |
±7ppm |
530BC155M520DG |
Si530 |
155.52MHz |
3.3V |
±7ppm |
530EC156M250DG |
Si530 |
156.25MHz |
2.5V |
±7ppm |
530AC187M500DG |
Si530 |
187.5MHz |
3.3V |
±7ppm |
530BC187M500DG |
Si530 |
187.5MHz |
3.3V |
±7ppm |
530FC187M500DG |
Si530 |
187.5MHz |
2.5V |
±7ppm |
530EC148M500DG |
Si530 |
148.5MHz |
2.5V |
±7ppm |
530EC200M000DG |
Si530 |
200MHz |
2.5V |
±7ppm |
531FC155M520DG |
Si531 |
155.52MHz |
2.5V |
±7ppm |